A method for fabricating a transistor having a lightly doped drain structure is disclosed. The method comprises the steps of: forming a gate insulating film over a first conductive semiconductor substrate; covering the gate insulating film with a gate layer and an insulating film for gate cap, in due...http://www.google.de/patents/US5374574?utm_source=gb-gplus-sharePatent US5374574 - Method for the fabrication of transistor
