The use of atomic layer deposition (ALD) to form a dielectric layer of hafnium nitride (Hf3N4) and hafnium oxide (HfO2) and a method of fabricating such a combination gate and dielectric layer produces a reliable structure for use in a variety of electronic devices. Forming the dielectric structure includes...http://www.google.de/patents/US7498247?utm_source=gb-gplus-sharePatent US7498247 - Atomic layer deposition of Hf3N4/HfO2 films as gate dielectrics
