A method of plasma etching a gate stack on silicon with a chlorine-containing plasma precursor gas in a vacuum chamber fitted with an electrically conductive planar coil disposed outside the chamber and adjacent to a dielectric window mounted in a wall of the chamber, the conductive planar coil coupled...http://www.google.de/patents/US5591301?utm_source=gb-gplus-sharePatent US5591301 - Plasma etching method
