Flash type programmable nonvolatile memory unit cells are provided, along with a manufacturing method. Each unit cell is formed such that the interpoly dielectric layer and the control gate surround the top surface and also the four lateral surfaces of the floating gate. This increases the capacitance...http://www.google.de/patents/US6417538?utm_source=gb-gplus-sharePatent US6417538 - Nonvolative semiconductor memory device with high impurity concentration under field oxide layer
