An improved configuration of a capacitor formed with FET technology and a resistor and/or conductor is provided. In this configuration a capacitor is formed in which the diffusion zone of the substrate is used as one plate of the capacitor and what would normally be the gate electrode of an FET is used...http://www.google.de/patents/US5541442?utm_source=gb-gplus-sharePatent US5541442 - Integrated compact capacitor-resistor/inductor configuration
