In a method for manufacturing a single electron memory device including a single electron storage element in a gate lamination pattern formed on a nano-scale channel region of a MOSFET, formation of the gate lamination pattern includes sequentially forming a lower layer and a single electron storage...http://www.google.de/patents/US6946346?utm_source=gb-gplus-sharePatent US6946346 - Method for manufacturing a single electron memory device having quantum dots between gate electrode and single electron storage element
