A thin film transistor is provided on a insulative substrate and includes a polysilicon body film having a ridge portion formed on a predetermined portion of the substrate. A first gate insulation film, a main gate and a cap oxide film are successively formed on the ridge portion of the ...http://www.google.de/patents/US5693549?utm_source=gb-gplus-sharePatent US5693549 - Method of fabricating thin film transistor with supplementary gates
