A method for an enhanced deposition control, comprises forming at least one device within a substrate of a semiconductor wafer, and depositing a silicon nitride layer over the wafer in a reactor at a pressure of at least approximately 104 Pa. ...http://www.google.de/patents/US20020081794?utm_source=gb-gplus-sharePatent US20020081794 - Enhanced deposition control in fabricating devices in a semiconductor wafer
