A nonvolatile memory cell is constructed using a floating-gate (FG) pFET Readout Transistor (RT) having its source tied to a power source (Vdd) and its drain providing a current which can be sensed to determine a cell state. The gate of the RT provides for charge/information storage. A control capacitor...http://www.google.de/patents/US7221596?utm_source=gb-gplus-sharePatent US7221596 - pFET nonvolatile memory
