The present invention provides methods for fabrication of fin-type field effect transistors (FinFETs) and thick-body devices on the same chip using common masks and steps to achieve greater efficiency than prior methods. The reduction in the number of masks and steps is achieved by using common masks...http://www.google.de/patents/US7163851?utm_source=gb-gplus-sharePatent US7163851 - Concurrent Fin-FET and thick-body device fabrication
