A method for forming a ferroelectric capacitor for use an integrated circuit establishing one layer over another and then annealing the structure, using an oxygen or ozone anneal, after each layer is established. In particular, an ozone anneal is used after the establishment of a layer of ferroelectric...http://www.google.de/patents/US5374578?utm_source=gb-gplus-sharePatent US5374578 - Ozone gas processing for ferroelectric memory circuits
