A novel signal scaling MESFET of a segmented dual gate design is disclosed. The MESFET, which is monolithically integrated on a semi-insulating substrate capable of localized surface modification to form active semiconductor regions using MMIC (monolithic microwave integrated circuit) techniques, has...http://www.google.de/patents/US4734751?utm_source=gb-gplus-sharePatent US4734751 - Signal scaling MESFET of a segmented dual gate design
