An SRAM cell is formed such that pass channel-stop regions, which are adjacent to the pass transistors, have a higher doping concentration compared to the latch channel-stop regions that are adjacent to the latch transistors. In one embodiment, the pass channel-stop regions are formed using two channel-stop...http://www.google.de/patents/US5393689?utm_source=gb-gplus-sharePatent US5393689 - Process for forming a static-random-access memory cell
