A method for manufacturing a semiconductor device using a polycrystalline silicon layer as an electric conductive portion such as an electrode and/or conductor, which includes steps for doping the polycrystalline silicon layer with an impurity, and applying a radiation beam at least to part of the polycrystalline...http://www.google.de/patents/US4309224?utm_source=gb-gplus-sharePatent US4309224 - Method for manufacturing a semiconductor device
