There is provided a method for eliminating influence of nickel element from a crystal silicon film obtained by utilizing nickel. A mask made of a silicon oxide film is formed on an amorphous silicon film. Then, the nickel element is held selectively on the surface of the amorphous silicon film by utilizing...http://www.google.de/patents/US6383852?utm_source=gb-gplus-sharePatent US6383852 - Semiconductor device and fabrication method thereof
