An intrinsic device section is provided by laminating a drain area, an intermediate area, and a source area above a GaAs substrate and by forming a channel area at one oblique surface thereof. A drain electrode ohmic connected to the drain area extends toward the output side, a source electrode ohmic...http://www.google.de/patents/US6100554?utm_source=gb-gplus-sharePatent US6100554 - High-frequency semiconductor device
