A method for epitaxial growth of Group III nitrides on a substrate using source gases consistent with metal organic chemical vapor deposition is provided. A heterostructure formed from two Group III nitride epitaxial layers is grown on a substrate in an atmosphere containing minimal hydrogen. The two...http://www.google.de/patents/US7662682?utm_source=gb-gplus-sharePatent US7662682 - Highly uniform group III nitride epitaxial layers on 100 millimeter diameter silicon carbide substrates
