A method of fabricating single and dual damascene copper interconnects is achieved. A semiconductor substrate layer is provided. Conductive traces are provided in an isolating dielectric layer. An intermetal dielectric layer is deposited overlying the conductive traces and the isolating dielectric layer....http://www.google.de/patents/US6251781?utm_source=gb-gplus-sharePatent US6251781 - Method to deposit a platinum seed layer for use in selective copper plating
