A semiconductor memory cell, and methods of fabricating same, that includes a substrate (10) and a plurality of trench capacitors (12) formed at least partially within the substrate and dielectrically isolated therefrom. A silicon-on-insulator (SOI) region includes a silicon layer (16) that overlies...http://www.google.de/patents/US5055898?utm_source=gb-gplus-sharePatent US5055898 - DRAM memory cell having a horizontal SOI transfer device disposed over a buried storage node and fabrication methods therefor
