A dual gate strained-Si MOSFET with thin SiGe dislocation regions and a method for fabricating the same are provided. The method comprises: forming a first layer of relaxed SiGe overlying a substrate, having a thickness of less than 5000 ; forming a second layer of relaxed SiGe overlying the substrate...http://www.google.de/patents/US20040135138?utm_source=gb-gplus-sharePatent US20040135138 - System and method for isolating silicon germanium dislocation regions in strained-silicon CMOS applications
