A low power, high speed magneto-resistive memory is disclosed. The disclosed memory directly senses the resistive state of one or more magneto-resistive memory elements. This allows the memory to be read during a single read cycle, without the need for a word line current. This may substantially increase...http://www.google.de/patents/US6493258?utm_source=gb-gplus-sharePatent US6493258 - Magneto-resistive memory array
