A method for manufacturing a semiconductor device such as a thin film transistor using a crystal silicon film is provided. The crystal silicon film is obtained by selectively forming films, particles or clusters containing nickel, iron, cobalt, ruthenium, rhodium, paradium, osmium, iridium, platinum,...http://www.google.de/patents/US20020037609?utm_source=gb-gplus-sharePatent US20020037609 - Semiconductor device and method for manufacturing the same
