In one embodiment, the present invention relates to a method of facilitating heat removal from a device layer of a silicon-on-insulator substrate comprising bulk silicon, an insulation layer over the bulk silicon, and a silicon device layer over the insulation layer involving forming at least one conductive...http://www.google.de/patents/US6483147?utm_source=gb-gplus-sharePatent US6483147 - Through wafer backside contact to improve SOI heat dissipation
