An SOI-type thin film transistor having a transparent insulating substrate a first gate electrode, a first gate insulating film, a semiconductor layer, a second gate electrode and a second gate insulating film which are respectively formed on the transparent insulating substrate, wherein the width of...http://www.google.de/patents/US5420048?utm_source=gb-gplus-sharePatent US5420048 - Manufacturing method for SOI-type thin film transistor
