A low defect (e.g., dislocation and micropipe) density silicon carbide (SiC) is provided as well as an apparatus and method for growing the same. The SiC crystal, grown using sublimation techniques, is preferably divided into two stages of growth. During the first stage of growth, the crystal grows in...http://www.google.de/patents/US6534026?utm_source=gb-gplus-sharePatent US6534026 - Low defect density silicon carbide
