The present invention relates to a flash memory cell and method of manufacturing the same, and programming/erasing/reading method in the flash memory cell. According to the present invention, a source region and a drain region are first formed and a tunnel oxide film is then formed. Therefore, it is...http://www.google.de/patents/US6703275?utm_source=gb-gplus-sharePatent US6703275 - Flash memory cell and method of manufacturing the same, and programming/erasing/reading method in the flash memory cell
