There is provided a method of removing trap levels and defects, which are caused by stress, from a single crystal silicon thin film formed by an SOI technique. First, a single crystal silicon film is formed by using a typical bonding SOI technique such as Smart-Cut or ELTRAN. Next, the single crystal...http://www.google.de/patents/US8053837?utm_source=gb-gplus-sharePatent US8053837 - Semiconductor device
