A thin film transistor of the present invention includes a semiconductor thin film (8); a gate insulating film (7) formed on one surface of the semiconductor thin film (8); a gate electrode (6) formed to be opposite to the semiconductor thin film (8) through the gate insulating film (7); a source electrode...http://www.google.de/patents/US7385224?utm_source=gb-gplus-sharePatent US7385224 - Thin film transistor having an etching protection film and manufacturing method thereof
