A memory applicable to an embedded memory is provided. The memory includes a substrate, a gate, a charge-trapping gate dielectric layer, a source, and a drain. The gate is disposed above the substrate. The charge-trapping gate dielectric layer is disposed between the gate and the substrate. The source...http://www.google.de/patents/US8036027?utm_source=gb-gplus-sharePatent US8036027 - Semiconductor device and memory
