A three-dimensional five transistor SRAM trench structure and fabrication method therefor are set forth. The SRAM trench structure includes four field-effect transistors ("FETs") buried within a single trench. Specifically, two FETs are located at each of two sidewalls of the trench with one FET being...http://www.google.de/patents/US6174763?utm_source=gb-gplus-sharePatent US6174763 - Three-dimensional SRAM trench structure and fabrication method therefor
