A method for forming a stacked gate of a flash memory cell is described. A first dielectric layer, a conductive layer and a silicon nitride layer are sequentially formed over a substrate. A photoresist pattern is formed over the silicon nitride layer. The silicon nitride layer, conductive layer, first...http://www.google.de/patents/US6171909?utm_source=gb-gplus-sharePatent US6171909 - Method for forming a stacked gate
