High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from...http://www.google.de/patents/US6589856?utm_source=gb-gplus-sharePatent US6589856 - Method and apparatus for controlling anti-phase domains in semiconductor structures and devices
Method and apparatus for controlling anti-phase domains in semiconductor ...
