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US006287900B1
(12) United States Patent ao) Patent No.: us 6,287,900 Bi
Yamazaki et al. (45) Date of Patent: Sep. 11,2001
(54) SEMICONDUCTOR DEVICE WITH
CATALYST ADDITION AND REMOVAL
(75) Inventors: Shunpei Yamazaki, Tokyo; Jun
Koyama; Satoshi Teramoto, both of
Kanagawa, all of (JP)
(73) Assignee: Semiconductor Energy Laboratory
Co., Ltd, Kanagawa-Ken (JP)
( * ) Notice: Subject to any disclaimer, the term of this patent is extended or adjusted under 35 U.S.C. 154(b) by 0 days.
(21) Appl. No.: 08/912,975
(22) Filed: Aug. 13, 1997
(30) Foreign Application Priority Data
Aug. 13, 1996 (JP) 8-232607
Aug. 25, 1996 (JP) 8-242603
(51) Int. C I. H01L 21/00
(52) U.S. C I 438/151
(58) Field of Search 438/154, 150,
438/162, 166, 406, 486, 402, 414, 142;
257/57, 72; 117/8, 18
(56) References Cited
U.S. PATENT DOCUMENTS
4,177,084 12/1979 Lau et al. .
4,751,193 6/1988 Myrick 117/44
5,543,648 * 8/1996 Miyawaki 257/347
5,562,769 * 10/1996 Dreifus et al 117/86
5,619,044 * 4/1997 Makita et al 257/64
5,643,826 7/1997 Ohtani et al 438/162
5,677,549 * 10/1997 Takayama et al 257/66
5,773,355 * 6/1998 Inoue et al 438/459
5,851,862 * 12/1998 Ohtani et al 438/166
6,013,544 * 1/2000 Makita et al 438/166
FOREIGN PATENT DOCUMENTS
57-0160122 7/1982 (JP) . 8-197127 7/1996 (JP) . 8-205384 7/1996 (JP) .
OTHER PUBLICATIONS
Fumio Shimura, "Semiconductor Silicon Crystal Engineering", K.K. Maruzen, pp. 217-240, Sep. 30, 1993.
* cited by examiner
Primary Examiner—Olik Chadhuri
Assistant Examiner—-William David Coleman
(74) Attorney, Agent, or Firm—Fish & Richardson PC
(57) ABSTRACT
In a MOS semiconductor device utilizing a crystalline silicon substrate, the formation of a parasitic channel is suppressed.
A solution of nickel acetate is applied silicon substrate 101 to form a layer including nickel indicated by 102. Thermal oxidation is performed to form a field oxide film 103 for device separation. At this time, a halogen element is included in the atmosphere. At this step, the action of nickel suppresses the formation of defects at the interface between the oxide film 103 and a channel region 106 and in the vicinity thereof, thereby suppressing the formation of a parasitic channel. Further, as a result of the action of the halogen element, nickel is gettered into the thermal oxidation film 103.
