[54] SUPERLATTICE SEMICONDUCTOR DEVICE
[75] Inventor: Mikihiro Kimura, Hyogo-ken, Japan
[73] Assignee: Mitsubishi Denki Kabushiki Kaisha,
Tokyo, Japan
[21] Appl. No.: 336,622
[22] Filed: Apr. 10, 1989
Related U.S. Application Data
[63] Continuation of Ser. No. 157,498, Feb. 17,1988, abandoned.
[30] Foreign Application Priority Data
Jul. 22, 1987 [JP] Japan 62-184160
[51] Int. CI.6 H01L 29/06
[52] U.S. CI 257/21; 257/618
[58] Field of Search 357/45 L, 16,
357/4, 55; 257/21, 618
[56] References Cited
U.S. PATENT DOCUMENTS
4,721,987 1/1988 Baglee et al 357/55
FOREIGN PATENT DOCUMENTS
2143083 1/1985 United Kingdom.
OTHER PUBLICATIONS
Kapon et al, "Moleculear Beam epitaxy of. .. Superlattice ... on non-planar substrates", Applied Phys. Letters vol. 50, No. 6, 9 Feb. 1987, pp. 347-349.
Superlattice Negative Defferential Conductivity: "Superlattice and Negative Differential Conductivity in Semiconductors", by L. Esaki et al, Jan., 1970, pp. 61-65.
J. Appl. Phys. 58: "Resonant Tunneling Transistor with Quantum Well Base and High-Energy Injection: A New Negative Differential Resistance Device", by F. Capasso et al, 1 Aug. '85, 1366-1368.
Ext. Abstracts of the 18th Conf. on Sol. St. Dev. & Mat.: "Resonant Tunneling Through Amorphous Silicon/Silicon Nitride . . . ", by S. Miyazaki et al, Tokyo, 1986, pp. 675-678.
IEDM-86: "A Resonant-Tunneling Bipolar Transistor (RBT): A Proposal and Demonstration for New Functional Devices ..." by T. Tutatsugi et al, 1986,11.7, pp. 286-289.
IEDM-86: "Quantum Well Resonant Tunneling Bipolar Transistor Operating at Room Tempreture", by F. Capasso et al, 1986, 11.6, pp. 282-285.
