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US007265373B2
(12) United States Patent ao) Patent No.: Us 7,265,373 B2
Wang et al. (45) Date of Patent: Sep. 4,2007
(54) PHASE CHANGE MEMORY DEVICE AND METHOD OF MANUFACTURING
(75) Inventors: Chao-Hsiung Wang, Hsin-Chu (TW);
Li-Shyue Lai, Jhube (TW); Denny
Tang, Saratoga, CA (US); Wen-Chen
Lin, Hsin-Chu (TW)
(73) Assignee: Taiwan Semiconductor
Manufacturing Company, Ltd.,
Hsin-Chu (TW)
( * ) Notice: Subject to any disclaimer, the term of this patent is extended or adjusted under 35 U.S.C. 154(b) by 128 days.
(21) Appl. No.: 11/028,841
(22) Filed: Jan. 4, 2005
(65) Prior Publication Data
US 2006/0148229 Al Jul. 6, 2006
(51) Int. CI.
H01L 47/00 (2006.01)
(52) U.S. CI 257/4; 438/95; 257/E27.004
(58) Field of Classification Search 257/4,
257/295, 300, 304; 438/95 See application file for complete search history.
