Semiconductor memory device having a side wall insulation film

(54) SEMICONDUCTOR MEMORY DEVICE

HAVING A SIDE WALL INSULATION FILM

(75) Inventor: Hideyuki Kinoshita, Mie-ken (JP)

Correspondence Address:

OBLON, SPIVAK, MCCLELLAND, MAIER &
NEUSTADT, P.C.
1940 DUKE STREET
ALEXANDRIA, VA 22314 (US)

(73) Assignee: Kabushiki Kaisha Toshiba, Tokyo (JP)

(21) Appl. No.: 10/383,754

(22) Filed: Mar. 10, 2003

(30) Foreign Application Priority Data

Mar. 26, 2002 (JP) 2002-086678

Publication Classification (51) Int. CI.7 G11C 7 00

(52) U.S. C I 365/200

(57) ABSTRACT

A semiconductor memory device having a side wall insulation film, comprises a first memory cell located on an active area of a semiconductor substrate, the first memory cell having a first gate electrode, a first source electrode and a first drain electrode; a second memory cell located on the semiconductor substrate, the second memory cell being apart from the first memory cell in a first distance and having a second gate electrode, a second source electrode and a second drain electrode; a silicon nitride layer formed above the first and second memory cells to cover the first and the second memory cells, a proportion of a thickness of the silicon nitride layer formed on a side surface of one of the first and second gate electrodes to the first distance between the first and the second memory cells being more than 0% and 15% or less.