United States Patent [19] [ii] Patent Number: 4,970,435
Tanaka et al. [45] Date of Patent: Nov. 13,1990
[54] PLASMA PROCESSING APPARATUS
[75] Inventors: Susumu Tanaka, Hachioji; Yuki
Hamada, Yokohama; Yasushi Sasaki,
Atsugi; Yutaka Shimada,
Sagamihara; Susumu Fukuoka,
Shiroyama, all of Japan
[73] Assignee: Tel Sagami Limited, Kanagawa,
Japan
[21] Appl. No.: 281,349
[22] Filed: Dec. 8,1988
[30] Foreign Application Priority Data
Dec. 9, 1987 [JP] Japan 62-311200
May 25, 1988 [JP] Japan 63-127567
[51] Int. CI.* H01J 7/24; H01J 17/26;
H05B 31/26; C23C 14/00
[52] U.S. CI 315/111.21; 118/50.1;
118/715; 313/231.31
[58] Field of Search 333/99 PL; 315/111.21;
313/231.31; 118/715, 723, 50.1; 156/643;
427/38, 47
[56] References Cited
U.S. PATENT DOCUMENTS
3,828,722 8/1974 Reuter et al 118/48
4,201,579 5/1980 Robinson et al 315/111.21
4,401,054 8/1983 Matsuo et al 118/50.1
4,423,303 12/1983 Hirose et al 315/111.21
4,611,121 9/1986 Miyamura et al 315/111.41
FOREIGN PATENT DOCUMENTS
61-191015 8/1986 Japan .
61-157325 9/1986 Japan .
58630 3/1987 Japan 313/231.31
210621 9/1987 Japan 313/231.31
60530 3/1988 Japan 313/231.31
73624 4/1988 Japan 313/231.31
8810506 12/1988 PCT Int'l Appl 315/111.21
OTHER PUBLICATIONS
Japanese Journal of Applied Physics, vol. 16, No. 11,
Nov. 1977, pp. 1979-1984; K. Suzuki, et al.
Japanese Journal of Applied Physics, vol. 19, No. 5,
May 1980, pp. 839-843; Y. Sakamoto, et al.
Japanese Journal of Applied Physics, vol. 21, No. 1,
Jan. 1982, pp. L4-L6; S. Matsuo, et al.
Japanese Journal of Applied Physics, vol. 22, No. 4,
Apr. 1983, pp. L210-L212; S. Matsuo, et al.
Proc. International Engineering Congress-ISIAT'83 &
IPAT'83, Kvoto (1983); K. Asakawa, et al. pp. 759-764.
Primary Examiner—Eugene R. Laroche
Assistant Examiner—Michael B. Shingleton
Attorney, Agent, or Firm—Obion, Spivak, McClelland,
Maier & Neustadt
[57] ABSTRACT
In a plasma processing apparatus of this invention, a reaction chamber opposed to a plasma generating chmaber is entirely opened at its one side surface opposing the obect to be processed, and an interval between the one side surface and the other side surface is set to be an integer multiple of a J wavelength of the microwave. A microwave oscillated by a microwave oscillator and supplied to a vacuum vessel can be converted into a plasma energy with high conversion efficiency, thereby minimizing a reflected wave.
8 Claims, 12 Drawing Sheets
