(12) United States Patent ao) Patent No.: us 6,674,138 Bi
Halliyal et al. (45) Date of Patent: Jan. 6,2004
(54) USE OF HIGH-K DIELECTRIC MATERIALS IN MODIFIED ONO STRUCTURE FOR SEMICONDUCTOR DEVICES
(75) Inventors: Arvind Halliyal, Cupertino, CA (US);
Mark T. Ramsbey, Sunnyvale, CA
(US); Kuo-Tung Chang, Saratoga, CA
(US); Nicholas H. Tripsas, San Jose,
CA (US); Robert B. Ogle, San Jose,
CA (US)
(73) Assignee: Advanced Micro Devices, Inc.,
Sunnyvale, CA (US)
( * ) Notice: Subject to any disclaimer, the term of this patent is extended or adjusted under 35 U.S.C. 154(b) by 29 days.
(21) Appl. No.: 10/036,757
(22) Filed: Dec. 31, 2001
(51) Int. CI.7 H01L 29/76
(52) U.S. CI 257/411; 257/314; 257/315;
257/316; 257/322
(58) Field of Search 257/314, 315,
257/316, 322, 411
(56) References Cited
U.S. PATENT DOCUMENTS
5,120,672 A * 6/1992 Mitchell et al 437/43
6,008,091 A * 12/1999 Gregor et al 438/261
6,171,900 Bl * 1/2001 Sun 438/240
6,248,628 Bl 6/2001 Halliyal et al 438/257
6,309,927 Bl 10/2001 Au et al 438/261
6,319,775 Bl 11/2001 Halliyal et al 438/261
2002/0106536 Al * 8/2002 Lee et al 428/702
2002/0115252 Al * 8/2002 Haukka et al 438/240
* cited by examiner
Primary Examiner—Richard Elms
Assistant Examiner—Christian D. Wilson
(74) Attorney, Agent, or Firm—Renner, Otto, Boisselle &
Sklar, LLP
(57) ABSTRACT
A process for fabrication of a semiconductor device including a modified ONO structure, including forming the modified ONO structure by providing a semiconductor substrate; forming a first oxide layer on the semiconductor substrate; depositing a layer comprising a high-K dielectric material on the first oxide layer; and forming a top oxide layer on the layer comprising a high-K dielectric material. The semiconductor device may be, e.g., a MIRRORBITTM two-bit EEPROM device or a floating gate flash device including a modified ONO structure.
16 Claims, 4 Drawing Sheets
