United States Patent [19] [li] Patent Number: 4,907,064
Yamazaki et al. [45] Date of Patent: Mar. 6,1990
[54] SEMICONDUCTOR DEVICE HAVING SILICON OXYNTTRIDE FILM WITH IMPROVED MOISTURE RESISTANCE
[75] Inventors: Kouji Yamazaki; Hideki Gomi, both of Tokyo, Japan
[73] Assignee: NEC Corporation, Tokyo, Japan
[21] Appl. No.: 93,657
[22] Filed: Sep. 8,1987
[30] Foreign Application Priority Data
Sep. 8, 1986 [JP] Japan 61-212358
[51] Int. CI.4 H01L 29/34
[52] U.S. CI 357/54; 357/52;
357/73
[58] Field of Search 357/54, 52, 71, 72,
357/73
[56] References Cited
U.S. PATENT DOCUMENTS
3,629,088 12/1971 Frank et al 357/54 X
4,091,406 5/1978 Lewis 357/54
4,097,889 6/1978 Kern et al 357/54
4,581,622 4/1986 Takasaki et al 357/52 X
4,621,277 11/1986 Ito et al 357/54
Primary Examiner—Andrew J. James
Assistant Examiner—Sara W. Crane
Attorney, Agent, or Firm—Sughrue, Mion, Zinn,
Macpeak & Seas
[57] ABSTRACT
Disclosed herein is a semiconductor device having an
aluminum wiring formed on a semiconductor substrate and a silicon oxynitride film covering the aluminum wiring and having Si, N, O as main elements, atomic ratio of the three elements being expressed by SixNj,Oz (where x+y+z=1.00), a range of the atomic ratio lying on lines interconnecting the following eight points in a Si-N-O ternary system or lying inside a region bounded by these lines;
(x=0.51, y=0.28, z=0.21)
(x=0.47, y=0.28, z=0.25)
(x=0.44, y=0.31, z=0.25)
(x=0.41, y=0.36, z=0.23)
(x=0.41, y=0.39, z=0.20)
(x=0.44, y=0.38, z=0.18)
(x=0.46, y=0.37, z=0.17)
(x=0.51, y=0.32, z=0.17).
Preferably, this silicon oxynitride film contains H of 5 to 18 atomic percents.
1 Claim, 7 Drawing Sheets
