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US006236101B1
(12) United States Patent ao) Patent No.: us 6,236,101 Bi
Erdeljac et al. (45) Date of Patent: May 22,2001
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OTHER PUBLICATIONS
Culbertson et al, "Evolution of RFMOSTM Power Amplifiers for High Efficiency Digital Cellular Applications," Texas Instruments, Dallas, Texas.
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* cited by examiner
Primary Examiner—Eddie C. Lee
Assistant Examiner—Edgardo Ortiz
(74) Attorney, Agent, or Firm—-Wade James Brady, III; Frederick J. Telecky, Jr.
(57) ABSTRACT
A thick layer of copper is formed on the outside the protective overcoat (PO) which protects an integrated circuit, and forms both an inductor and the upper electrode of a capacitor. Placing this layer outside the PO greatly reduces parasitic capacitances with the substrate in the devices.
10 Claims, 24 Drawing Sheets