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US006236101B1

(12) United States Patent ao) Patent No.: us 6,236,101 Bi

Erdeljac et al. (45) Date of Patent: May 22,2001

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5,478,773 * 12/1995 Dow et al 437/60

5,541,442 * 7/1996 Keil et al 257/533

5.656.524 * 8/1997 Eklund et al 438/238

5,661,344 * 8/1997 Havemann et al 257/758

5,859,456 * 1/1999 Efland et al 257/335

5,915,188 * 6/1999 Ramakrishnan et al 438/381

5,917,244 * 6/1999 Lee et al 257/762

5.929.525 * 7/1999 Lin 257/758

5,949,144 * 9/1999 Delagado et al 257/776

5,950,102 * 9/1999 Lee 438/619

OTHER PUBLICATIONS

Culbertson et al, "Evolution of RFMOSTM Power Amplifiers for High Efficiency Digital Cellular Applications," Texas Instruments, Dallas, Texas.

Brauchler et al, "Performance of RFMOSTM for 1.9 GHz CDMA Operation," IEEE MTTS International Microwave Symposium, Jun. 1998.

Khatibzadeh et al., "RF Technology Trends in Digital Wireless Communications," Texas Instruments, Dallas, Texas.

* cited by examiner

Primary Examiner—Eddie C. Lee
Assistant Examiner—Edgardo Ortiz

(74) Attorney, Agent, or Firm—-Wade James Brady, III; Frederick J. Telecky, Jr.

(57) ABSTRACT

A thick layer of copper is formed on the outside the protective overcoat (PO) which protects an integrated circuit, and forms both an inductor and the upper electrode of a capacitor. Placing this layer outside the PO greatly reduces parasitic capacitances with the substrate in the devices.

10 Claims, 24 Drawing Sheets

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BORON

BORON

BORON

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PHOTORESIST

A BORON

PHOTORESIST

RUIN f—<r—^—BORON I \) v———^-i

1 k\\l I LW

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