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US005529630A
United States PatWlt [19] [li] Patent Number: 5,529,630
Imahashi et al. [45] Date of Patent: Jun. 25, 1996
[54] APPARATUS FOR MANUFACTURING A LIQUID CRYSTAL DISPLAY SUBSTRATE, AND APPARATUS FOR EVALUATING SEMICONDUCTOR CRYSTALS
[75] Inventors: Issei Imahashi, Yamanashi-ken; Kiichi Hama, Chino; Jiro Hata, Yamanashi-ken, all of Japan
[73] Assignee: Tokyo Electron Limited, Tokyo, Japan
[21] Appl. No.: 385,929
[22] Filed: Feb. 9,1995
Related U.S. Application Data
4,309,225 1/1982 Fan et al. .
4,322,253 3/1982 Pankove et al. .
4,724,219 2/1988 Ridinger.
4,931,132 6/1990 Aspnes et al. .
FOREIGN PATENT DOCUMENTS
63-54715 3/1988 Japan.
176715 3/1989 Japan .
1179315 7/1989 Japan .
3268318 11/1991 Japan.
3248574 11/1991 Japan .
Primary Examiner—Jeffrey R. Snay
Attorney, Agent, or Firm—Obion, Spivak, McClelland,
Maier & Neustadt
[62] Division of Ser. No. 153,376, Nov. 16, 1993, Pat. No. 5,413,958.
[30] Foreign Application Priority Data
Nov. 16, 1992 [JP] Japan 4-330073
Jan. 25, 1993 [JP] Japan 5-29975
[51] Int. CI.6 H01L 21/26
[52] U.S. CI 118/665; 118/620; 437/174;
148/DIG. 6; 148/DIG. 90; 422/108; 250/354.1;
250/492.23
[58] Field of Search 118/620,665;
148/DIG. 90, DIG. 91, DIG. 92, DIG. 93, DIG. 94, DIG. 3, DIG. 6, DIG. 95; 437/174;
422/108; 250/354.1, 492.2, 492.23
[56] References Cited
U.S. PATENT DOCUMENTS 4,292,091 9/1981 Togei .
[57] ABSTRACT
An amorphous silicon film is formed on a glass substrate by a CVD method, and then the island regions of the amorphous silicon film is changed to a plurality of polycrystalline silicon regions which are arranged in a line and apart with each other in a predetermined distanced by intermittently irradiating laser pulses each having the same dimensions as those of the island region onto the amorphous silicon film, using a laser beam irradiating section. Switching elements including the island regions as semiconductor regions are formed by etching and film-forming process to constitute a driving circuit section. The section is divided to gate driving circuit sections and source driving circuit sections for driving thin film transistors formed in a pixel region.
1 Claim, 13 Drawing Sheets
