LIGHT EMITTING DIODE WITH
CONDUCTING METAL SUBSTRATE
Inventor: Trung Tri Doan, Los Gatos, CA (US)
Assignee: Semileds Corporation, Milpitas, CA
(US)
Notice: Subject to any disclaimer, the term of this patent is extended or adjusted under 35 U.S.C. 154(b) by 165 days.
Appl.No.: 11/032,882
Filed: Jan. 11, 2005
Prior Publication Data
US 2006/0154389 Al Jul. 13, 2006
Int. CI.
H01L 21/20 (2006.01)
U.S. CI 438/33; 438/459; 438/113;
257/E33.066
Field of Classification Search 438/22 47,
438/106-127, 459, 977 See application file for complete search history.
References Cited
U.S. PATENT DOCUMENTS
6,448,102 Bl* 9/2002 Kneissletal 438/46
6,555,405 B2* 4/2003 Chen etal 438/22
6,658,041 B2 12/2003 Uebbing
6,744,071 B2 6/2004 Sanoetal.
6,746,889 Bl * 6/2004 Eliashevich et al 438/33
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6,800,500 B2 10/2004 Comanetal.
2004/0135158 Al 7/2004 Hon
2004/0245543 Al 12/2004 Yoo
2005/0098792 Al 5/2005 Lee etal.
2005/0196888 Al * 9/2005 Morita 438/44
2006/0099730 Al* 5/2006 Lee etal 438/46
2006/0151801 Al* 7/2006 Doan et al 257/99
2006/0154390 Al* 7/2006 Tranetal 438/22
2006/0154391 Al* 7/2006 Tranetal 438/22
2006/0154393 Al* 7/2006 Doan et al 438/26
2006/0157721 Al* 7/2006 Tranetal 257/98
OTHER PUBLICATIONS
PCT Search Report dated Feb. 9, 2007.
* cited by examiner
Primary Examiner—Savitri Mulpuri
(74) Attorney, Agent, or Firm—Patterson & Sheridan, LLP
(57) ABSTRACT
Systems and methods for fabricating a light emitting diode include forming a multilayer epitaxial structure above a carrier substrate; depositing at least one metal layer above the multilayer epitaxial structure; removing the carrier substrate.
6 Claims, 4 Drawing Sheets
