IIIH
US006690473B1
(12) United States Patent ao) Patent No.: us 6,690,473 Bi
Stanke et al. (45) Date of Patent: Feb. 10,2004
4,659,220 A 4/1987 Bronte et al 356/237
4,848,908 A * 7/1989 Huang 356/489
4,869,593 A * 9/1989 Biegen 356/351
5.042,949 A * 8/1991 Greenberg et al 356/345
5,298,975 A * 3/1994 Khoury et al 356/375
5,412,473 A * 5/1995 Rosencwaig et al 356/451
5,436,725 A 7/1995 Ledger 356/357
5,517,312 A 5/1996 Finarov 356/386
5,604,344 A 2/1997 Finarov 250/201.3
5,616,063 A * 4/1997 Okumura et al 451/1
5,695,601 A * 12/1997 Kodera et al 156/636.1
5,747,813 A 5/1998 Norton et al 250/372
5.757,502 A * 5/1998 Weling 356/376
5,764,365 A 6/1998 Finarov 356/381
5,825,498 A 10/1998 Thakur et al 356/394
5,835,225 A * 11/1998 Thakur 356/381
5,948,203 A * 9/1999 Wang 156/345
6.108.091 A * 8/2000 Pecen et al 356/381
6.108.092 A * 8/2000 Sandhu 356/382
6,142,855 A * 11/2000 Nyui et al 451/67
6,157,450 A * 12/2000 Marchese-Ragona et al 356/
376
FOREIGN PATENT DOCUMENTS
EP 0 881 484 A2 12/1998 G01N/21/00
GB 2 314 037 A 12/1997 B23Q/1/36
WO WO 98/37404 8/1998 G01N/21/00
WO WO 99/01797 1/1999 G03F/7/20
OTHER PUBLICATIONS
L. Li, "Multilayer modal method for diffraction gratings of
arbitrary profile, depth, and permittivity," Jour. Opt. Soc. of
Am. A, vol. 10, No. 12, 1993, pp. 2581-2591.
PS. Hauge, "Polycrystalline silicon film thickness measure-
ment from analysis of visible reflectance spectra," /. Opt.
Soc. Am., vol. 69, No. 8, Aug. 1979, pp. 1143-1152.
H. Engstrom, "Measuring thickness of a film deposited onto
a multilayer metal surface," SPIE vol. 1673 Integrated
Circuit Metrology, Inspection, and Process Control VI,
1992, pp. 432-440.
(List continued on next page.)
Primary Examiner—Hoa Q. Pham
(74) Attorney, Agent, or Firm—Stallman & Pollock LLP (57) ABSTRACT
This invention is an instrument adaptable for integration into a process tool the combines a number of instruments for surface characterization. As an integrated process monitor, the invention is capable of monitoring surface dishing, surface erosion and thickness of residue layers on workpieces with little time delay. The invention is adaptable to making measurements while a wafer or work-piece is either wet or dry. A preferred embodiment includes an integrated optical profiler adapted to surface profiling in the presence of optical interference arising from retro-reflections from underlying optical non-uniformities. Alternate embodiments include an integrated stylus profiler with vibration isolation.
9 Claims, 35 Drawing Sheets
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OTHER PUBLICATIONS
G.E. Jellison, Jr., "Data analysis for spectroscopic ellipsometry," Thin Solid Films, vol. 234, 1993, pp. 416-422. The Handbook of Optics, vol. II, by Rasheed M.A. Azzam, "Chapter 27—Ellipsometry," and "Chapter 28—Spectroscopic Measurements," Michael Bass, ed., McGraw Hill, Inc., New York, 1995, pp. 27.1-28.6. T.R. Corle et al., "Differential interference contrast imaging on a real time confocal scanning optical microscope," Applied Optics, vol. 29, No. 26, Sep. 10, 1990, pp. 3769-3774.
C. J. Morath et al., "Ultrasonic multilayer metal film metrology," Solid State Technology, Jun. 1997, pp. 85-92.
D. Boning et al, "MIT/SEMATECH 931AZ Copper (Cu) Chemical/Mechanical Planarization Test Chip Design, Layout, and Electrical Test," SEMATECH Technology Transfer #98103580A-TR, 1998, 56 pages in length.
CM. Peyne et al., "Test Structures for Characterising a Damascene CMP Interconnect Process," Proc. IEEE 1997 Int. Conference on Microelectronic Test Structures, vol. 10, Mar. 1997, pp. 151-155.
M.A. Joffe et al, "Novel Thin-Film Metrology for CMP Applications," 1999 Proceedings of the Fourth International Chemica—Mechanical Planarization for ULSI Multilevel Interconnection Conference (CMP—MIC), 1999, pp. 73-76.
G. Hong et al., "Three-dimensional optical profiler using Nomarski interferometry," SPIE Proceedings, vol. 1994, Fabrication and Testing of Opticas and Large Optics, 1994, Meeting Date Jul. 11-Jul. 16, 1993, San Diego, CA, USA, pp. 150-153.
D.L. Lessor et al., "Quantitative surface topography determination by Nomarski reflection microscopy. I. Theory,"/. Opt. Soc. Am., vol. 69, No. 2, Feb. 2, 1979, pp. 357-366.
J.S. Hartman et al., "Quantitative surface topography determination by Nomarski reflection microscopy. 2: Microscope modification, calibration, and planar sample experiments," Applied Optics, vol. 19, No. 17, Sep. 1, 1980, pp. 2998-3009.
X. Niu et al., "Specular Spectroscopic Scatterometry in DUV Lithography," SPIE 24th International Symposium on Microlithography, SPIE Paper 3677-18, 1999, 10 pages in length.
S.A. Coulombe et al., "Ellipsometric-Scatterometry for sub-0.1 fim CD measurements," SPIE, vol. 3332, 1998, pp. 282-293.
J. Bischoff et al., "Optical scatterometry of quarter micron patterns using neural regression," SPIE, vol. 3332,1998, pp. 526-537.
T. Ganz et al., "Microellipsometry," see http://gastno.iap
.physik.tu-darmstadt.de/omt/jb97 mic.ps, 1977 Annual
Report, 3 pages in length.
H. Jennewein et al., "Interferometrical Profilometry at Surfaces with Varying Materials," SPIE 24th International Symposium on Microlithography, SPIE Paper 3677-109, 1999, 9 pages in length.
G. Springer, "Dependence of wafer carrier motor current and polish pad surface temperature signal on CMP consumable conditions and Ti/TiN linear deposition parameters for Tungsten CMP endpoint detection," 1999 Proceedings of the Fourth International Chemical—Mechanical Planarization for ULSI Multilevel Interconnection Conference (CMP— MIC), 1999, pp. 45-51.
* cited by examiner
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