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Chang et al.

[45] Dec. 22, 1981

[54]

[75]

[73]

[21]

[22]

[51] [52]

[58]

[56]

PLANAR METAL INTERCONNECTION
SYSTEM AND PROCESS

Inventors: Kenneth Chang, Hopewell Junction;

George T. Chiu, Wappingers Falls,
both of N.Y.; Anthony Hoeg, Jr.,
Cary, N.C.; Linda H. Lee,
Poughkeepsie, N.Y.

Assignee: International Business Machines
Corporation, Armonk, N.Y.

Appl.No.: 165,537

Filed: Jul. 3, 1980

Int. CU G03C 5/00

U.S. CI 430/314; 156/643;

156/646; 156/656; 156/659.1; 156/661.1; 204/192 E; 430/316; 430/317; 430/318;

430/323; 430/324

Field of Search 430/314, 316, 317, 318,

430/323, 324; 156/643, 646, 655, 656, 659.1, 661.1; 204/192 E; 357/73

References Cited

U.S. PATENT DOCUMENTS

2,559,389 7/1951 Beeber et al 41/43

3,395,057 7/1968 Fick 156/3

3,506,506 4/1970 Pennebaker, Jr 156/3

3,544,400 12/1970 Deutsch 156/13

3,700,497 10/1972 Epifano et al 117/212

3,715,250 2/1973 Altman et a! 156/22

3,820,994 6/1974 Lindberg et al 96/36

3,837,907 9/1974 Berglund et al 156/659.1 X

3,844,831 10/1974 Cass et al 117/212

3,846,166 11/1974 Saiki et al. .: 117/212

3,849,136 11/1974 Grebe 96/36.2

3,873,361 3/1975 Franco et al 117/212

3,976,524 8/1976 Feng 430/317 X

3,982,943 9/1976 Feng et al ; 96/38.4

3,985,597 10/1976 Zielinski 156/11

3,991,231 11/1976 Trausch 427/96

4,004,044 1/1977 Franco et al 427/43

4,025,411 5/1977 Hom-Ma et al 204/192 E

4,035,276 7/1977 Havas et al 204/192 EC

4,038,110 7/1977 Feng 357/73 X

4,040,891 8/1977 Chang et al 156/651

4,040,893 8/1977 Ghezzo 156/659

4,057,659 11/1977 Pammer et al 427/89

4,076,575 2/1978 Chang 156/656

4,098,637 7/1978 Bell 156/644

4,113,550 9/1978 Saiki et al 156/656

4,152,195 5/1979 Bahrle et al 156/656

4,184,909 1/1980 Chang et al 156/659.1 X

OTHER PUBLICATIONS

J. J. Colacino and T. A. Bartush, "Removal of Quartz Spikes Over Metal Lands," IBM TDB, vol. 20, No. 4, Sep. 1977, p. 1381.

Primary Examiner—Edward C. Kimlin

Attorney, Agent, or Firm—Henry Powers; Joseph C.

Redmond, Jr.; Theodore E. Galanthay

[57] ABSTRACT

A process for forming a layer of a metallurgy interconnection system on a substrate. The process involves forming a first electrically insulative layer of an organic polymerized resin material on the substrate, forming a second thin layer on the first layer which is resistant to dry etching conditions which are effective to etch the first layer, depositing a photoresist layer on the second layer, exposing the photoresist to form an inverse pattern of a desired metallurgy pattern and developing the photoresist, reactive ion etching the resultant exposed areas of the first and second layers, depositing a blanket continuous conductive metal layer over the hills and valleys of the pattern resulting from reactive ion etching, applying a planarizing photoresist layer, etching the photoresist to expose high spots of the metal layer, and etching the metal high spots to a depth sufficient to expose the surface of the second layer.

7 Claims, 15 Drawing Figures

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