Method of manufacturing active matrix substrate

United States Patent

[19]

Kawai et al.

US005821133A [ii] Patent Number: [45] Date of Patent:

5,821,133 Oct. 13, 1998

[54] METHOD OF MANUFACTURING ACTIVE MATRIX SUBSTRATE

[75] Inventors: Katsuhiro Kawai, Yamatotakada;

Mikio Katayama, Ikoma; Satoshi
Yabuta, Taki-gun; Masaru Kajitani,

Osaka, all ol Japan

[73] Assignee: Sharp Kabushiki Kaisha, Osaka, Japan

[21] Appl. No.: 576,036

[22] Filed: Dec. 21, 1995

[30] Foreign Application Priority Data

Dec. 27, 1994 [JP] Japan 6-326205

[51] Int. CI.6 H01L 21/786

[52] U.S. CI 438/30; 438/158; 438/722

[58] Field of Search 438/30, 149, 151,

438/155, 158, 164, 722; 148/DIG. 150;

349/43

[56] References Cited

U.S. PATENT DOCUMENTS

5,075,674 12/1991 Katayama et al 349/43

5,102,361 4/1992 Katayama et al 438/30

5,166,086 11/1992 Takeda et al 438/30

5,231,039 7/1993 Sakono et al 438/30

FOREIGN PATENT DOCUMENTS

6-95149 4/1994 Japan .

Primary Examiner—Michael Trinh

Attorney, Agent, or Firm—Nixon & Vanderhye PC.

[57] ABSTRACT

A simplified method ol manulacturing an active matrix substrate is disclosed. Gate wires, gate electrodes, gate insulating films, an etching stopper layer, semiconductor layers and contact layers are formed on an electrically insulating substrate. Pixel electrode material films, second electrical conductor films and second insulating films are formed successively on the substrate. The second insulating film and the second electrical conductor film are simultaneously patterned, so that source wires, source electrodes and drain electrodes are formed from the second electrical conductor film, and a protective film from the second insulating film. Then, the pixel electrode material film is patterned thereby to form pixel electrodes in a plurality of regions defined by the gate wires and the source wires.

3 Claims, 12 Drawing Sheets