Semiconductor processing methods of forming contact openings, methods of ...

(54) SEMICONDUCTOR PROCESSING

METHODS OF FORMING CONTACT
OPENINGS, METHODS OF FORMING
ELECTRICAL CONNECTIONS AND
INTERCONNECTIONS, AND INTEGRATED
CIRCUITRY

(76) Inventor: Charles H. Dennison, Meridian, ID (US)

Correspondence Address:

WELLS ST. JOHN ROBERTS GREGORY &

MATKIN P.S.

601 W. FIRST AVENUE

SUITE 1300

SPOKANE, WA 99201-3828 (US)

(21) Appl. No.: 10/244,122

(22) Filed: Sep. 12, 2002

Related U.S. Application Data

(63) Continuation of application No. 09/808,886, filed on Mar. 14, 2001, now Pat. No. 6,468,883, which is a continuation of application No. 09/146,840, filed on Sep. 3, 1998, now Pat. No. 6,242,302.

Publication Classification

(51) Int. CI.7 H01L 21/8242; H01L 23/48;

H01L 29/40

(52) U.S. CI 257/758; 438/622; 438/620;

438/256; 257/774

(57) ABSTRACT

Methods of forming contact openings, making electrical interconnections, and related integrated circuitry are described. Integrated circuitry formed through one or more of the inventive methodologies is also described. In one implementation, a conductive runner or line having a contact pad with which electrical communication is desired is formed over a substrate outer surface. A conductive plug is formed laterally proximate the contact pad and together therewith defines an effectively widened contact pad. Conductive material is formed within a contact opening which is received within insulative material over the effectively widened contact pad. In a preferred implementation, a pair of conductive plugs are formed on either side of the contact pad laterally proximate thereof. The conductive plug(s) can extend away from the substrate outer surface a distance which is greater or less than a conductive line height of a conductive line adjacent which the plug is formed. In the former instance and in accordance with one aspect, such plug(s) can include a portion which overlaps with the contact pad of the associated conductive line.