Methods of forming dielectric materials

(54) METHODS OF FORMING DIELECTRIC MATERIALS

(75) Inventors: Behnam Moradi, Boise; Er-Xuan Ping, Meridian; Lingyi A. Zheng, Boise; John Packard, Meridian, all of ID (US)

(73) Assignee: Micron Technology, Inc., Boise, ID (US)

( * ) Notice: Subject to any disclaimer, the term of this patent is extended or adjusted under 35 U.S.C. 154(b) by 0 days.

(21) Appl. No.: 09/651,818

(22) Filed: Aug. 30, 2000

(51) Int. CI.7 H01L 21/336; H01L 21/20;

H01L 21/71; H01L 21/469

(52) U.S. CI 438/260; 438/398; 438/773;

438/746; 438/787; 438/964

(58) Field of Search 438/255, 762,

438/765, 769, 770, 773, 778, 786, 787, 964, 260, 398, 665

The invention encompasses a method of forming a dielectric material. A nitrogen-comprising layer is formed on at least some of the surface of a rugged polysilicon substrate to form a first portion of a dielectric material. After the nitrogencomprising layer is formed, at least some of the substrate is subjected to dry oxidation with one or both of NO and N20 to form a second portion of the dielectric material. The invention also encompasses a method of forming a capacitor. A layer of rugged silicon is formed over a substrate, and a nitrogen-comprising layer is formed on the layer of rugged silicon. Some of the rugged silicon is exposed through the nitrogen-comprising layer. After the nitrogen-comprising layer is formed, at least some of the exposed rugged silicon is subjected to dry oxidation conditions with one or both of NO and N20. Subsequently, a conductive material layer is formed over the nitrogen-comprising layer. Additionally, the invention encompasses a capacitor structure. The structure includes a first capacitor electrode comprising a rugged polysilicon layer, a nitrogen-comprising layer on the rugged polysilicon layer, and a second capacitor electrode. The nitrogen-comprising layer is between the first and second capacitor electrodes.

15 Claims, 3 Drawing Sheets