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US005537432A [11] Patent Number: [45] Date of Patent:
[54] WAVELENGTH-STABILIZED, HIGH POWER SEMICONDUCTOR LASER
[75] Inventors: David G. Mehuys, Sunnyvale; David F. Welch, Menlo Park; Robert J. Lang, Pleasanton; Donald R. Scifres, San
Jose, all of Calif.
[73] Assignee: SDL, Inc., San Jose, Calif.
[21] Appl. No.: 390,121
[22] Filed: Feb. 17, 1995
Related U.S. Application Data
[63] Continuation-in-part of Ser. No. 1,735, Jan. 7,1993, Pat. No. 5,392,308.
[51] Int. CI.6 HOIS 3/19
[52] U.S. CI 372/50; 372/32; 372/46;
372/94; 372/96; 372/99; 372/102
[58] Field of Search 372/44-50, 97,
372/99, 100, 101, 102, 94, 96, 29, 32
[56] References Cited
U.S. PATENT DOCUMENTS
4,251,780 2/1981 Scifres et al 331/94.5
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OTHER PUBLICATIONS
Sorin et al., "Single-frequency output from a broadband-tunable external fiber-cavity laser," Optics Letters, vol. 13, No. 9, Sep. 1988.
Zorabedian et al., "Interference-filter-tuned, alignment-stabilized, semiconductor external-cavity laser," Optics Letters, vol. 13, No. 10, pp. 826-828, Oct. 1988.
(List continued on next page.)
Primary Examiner—Rodney B. Bovernick Assistant Examiner—Hemang Sanghavi Attorney, Agent, or Firm—Schneck & McHugh
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A wavelength-stabilized, semiconductor laser having a light amplifying diode heterostructure with a flared gain region in an external resonant cavity. The flared gain region has a narrow aperture end which may be coupled to a single mode waveguide and a wide output end. A light emitting surface of the heterostructure proximate to the wide end of the flared gain region is partially reflective and combines with an external reflector to form a resonant cavity that is effectively unstable. The intracavity light-emitting surface proximate to the narrow aperture end is antireflection coated. The external reflector may be a planar mirror or a grating reflector. A lens or an optical fiber may couple the aperture end of the flared gain region to the external reflector. Frequency-selective feedback is provided by orienting the grating reflector or providing a prism in the cavity in front of the external planar mirror. Other filtering elements may also be placed in the external cavity. The flared gain region and waveguide may be differentially pumped or modulated with current provided by separate contacts.
105 Claims, 11 Drawing Sheets
OTHER PUBLICATIONS
Goldberg et al., "Single lobe operation of a 40-element laser array in an external ring laser cavity", Applied Physics Letters, vol. 51, pp. 871-873, 21 Sep. 1987. Surette et al., "High-Power Ring Laser Using a Broad-Area GaAlAs Amplifier", IEEE Photonics Technology Letters, vol. 5, pp. 919-922, Aug. 1993.
Bernacki et al., "Alignment-insensitive technique for wideband tuning of an unmodified semiconductor laser," Optics Letters vol. 13, No. 9, pp. 725-727, Sep. 1988. Fujita et al., "Polarization bistability in external cavity semiconductor lasers," Appl. Phys. Lett., 51(6), pp. 392-394, Aug. 10, 1987.
Helms et al., "Stable Operation Range for Laser Diodes with an Integrated Passive Cavity in the Presence of External Optical Feedback," IEEE Photonics Technology Letters, vol. 1, No. 12, pp. 409-411, Dec. 1989. Hori, et al., "External-Cavity Semiconductor Laser with Focusing Grating Mirror," IEEE Journal of Quantum Electronics, vol. 26, No. 10, pp. 1747-1755, Oct. 1990.
Mittelstein et al., "Broadband Tunability of gain-flattened quantum well semiconductor lasers with an external grating," Appl. Phys. Lett., 54(12), 1092-1094, Mar. 20, 1989. Notomi et al., "Broad-Band Tunable Two-Section Laser Diode with External Grating Feedback," IEEE Photonics Technology Letters, vol. 2, No. 2, pp. 85-87, Feb. 1990. Schremer et al., "Single-frequency tunable external-cavity semiconductor laser using an electro-optic birefringent modulator," Appl. Phys. Lett., 55(1), pp. 19-21, Jul. 3,1989. Schremer et al., "External-Cavity Semiconductor Laser with 1000 GHz Continuous Piezoelectric Tuning Range," IEEE Photonics Technology Letters, vol. 2, No. 1, pp. 3-5, Jan. 1990.
Sharfin et al., "Lateral-Mode Selectivity in External-Cavity Diode Lasers with Residual Facet Reflectivity," IEEE Journal of Quantum Electronics, vol. 26, No. 10, pp. 1756-1763, Oct. 1990.
Ludeke et al., "Single Mode GaAs Laser in External Cavity," IBM Technical Disclosure Bulletin, vol. 15, No. 2, pp. 548-549, Jul. 1972.
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