(12) United States Patent ao) Patent No.: us 6,303,391 Bi
Hintermaier et al. (45) Date of Patent: *Oct. 16,2001
(54) LOW TEMPERATURE CHEMICAL VAPOR DEPOSITION PROCESS FOR FORMING BISMUTH-CONTAINING CERAMIC FILMS USEFUL IN FERROELECTRIC MEMORY DEVICES
(75) Inventors: Frank S. Hintermaier; Christine Dehm, both of Munich; Wolfgang Hoenlein, Untorhaching, all of (DE); Peter C. Van Buskirk, Newtown, CT (US); Jeffrey F. Roeder, Brookfield, CT (US); Bryan C. Hendrix, Danbury, CT (US); Thomas H. Baum, New Fairfield, CT (US); Debra A. Desrochers, Brookfield, CT (US)
(73) Assignees: Advanced Technology Materials, Inc., Danbury, CT (US); Siemens Aktiengesellschaft, Munich (DE)
( * ) Notice: This patent issued on a continued prosecution application filed under 37 CFR 1.53(d), and is subject to the twenty year patent term provisions of 35 U.S.C. 154(a)(2).
Subject to any disclaimer, the term of this patent is extended or adjusted under 35 U.S.C. 154(b) by 0 days.
(21) Appl. No.: 08/975,087
(22) Filed: Nov. 20, 1997
Related U.S. Application Data
(60) Provisional application No. 60/050,081, filed on Jun. 26, 1997.
(51) Int. CI. H01L 21/00
(52) U.S. CI 438/3; 438/240; 438/785;
427/62; 427/126.3
(58) Field of Search 438/785, 3, 240;
427/62, 126.3
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OTHER PUBLICATIONS
Bunshah et al. "Deposition Technologies for Films and Coatings." 1982. 357-359.
Tingakai Li, et al: "Surface structure and morphology of SrBi2Ta209(SBT) thin films", Structure and Evolution of Surfaces, Symposium, Structure and Evolution of Surfaces, Symposium, Boston, MA, USA, Dec. 2-5, 1996, pp. 407-412, XP000900949 1997 Pittsbourgh, PA, Mater. Res. Soc*
* cited by examiner
Primary Examiner—Stephen D. Meier
Assistant Examiner—Maria Guerrero
(74) Attorney, Agent, or Firm—Steven J. Hultquist; Oliver
A. M. Zitzmann; Robert A. McLauchlan
(57) ABSTRACT
A low temperature CVD process using a tris ((3-diketonate) bismuth precursor for deposition of bismuth ceramic thin films suitable for integration to fabricate ferroelectric memory devices. Films of amorphous SBT can be formed by CVD and then ferroannealed to produce films with Aurivillius phase composition having superior ferroelectric properties suitable for manufacturing high density FRAMs.
14 Claims, 11 Drawing Sheets
