[54] METHOD AND APPARATUS FOR
CONTROLLING THE DEPOSITION OF
FILMS BY REACTIVE SPUTTERING
[75] Inventors: Guillermo Bomchil, Seyssinet;
Francois Buiguez, Pau; Sylvie Gaizin,
Chambery; Alain Monfret, Meudon;
Louise Peccoud, Claix, all of France
[73] Assignee: Commissariat a l'Energie Atomique, Paris, France
[21] Appl. No.: 848,133
[22] Filed: Nov. 3, 1977
[30] Foreign Application Priority Data
Nov. 15, 1976 [FR] France 76 34840
[51] Int. CI.* C23C 15/00
[52] U.S. CI 204/192 R; 204/192 P;
204/298
[58] Field of Search 204/192 R, 192 C, 192 P,
204/192 D, 298
[56] References Cited
U.S. PATENT DOCUMENTS 3,761,375 9/1973 Pierce et al 204/192
3,907,660 9/1975 Gillery 204/298
3,962,062 6/1976 Ingrey 204/192
4,043,889 8/1977 Kochel 204/192 R
4,065,600 12/1977 King et al 428/432
FOREIGN PATENT DOCUMENTS
2,422,808 11/1975 Fed. Rep. of Germany 204/298
1,406,093 6/1965 France.
2,232,832 1/1975 France.
367,074 2/1932 United Kingdom 204/298
Primary Examiner—John H. Mack
Assistant Examiner—Aaron Weisstuch
Attorney, Agent, or Firm—McNenny, Pearne, Gordon,
Gail, Dickinson & Schiller
[57] ABSTRACT
The method consists in establishing the ion bombardment parameters, iri varying a regulation parameter in order to initiate deposition, in measuring at each instant the total pressure drop within the vacuum chamber with respect to the initial pressure and in controlling the total pressure drop by controllably varying the regulation parameter.
10 Claims, 5 Drawing Figures
